| PART |
Description |
Maker |
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| GS78116A |
8Mb Async SRAMs
|
GSI Technology
|
| MT55L512L18P MT55L256L36P |
8Mb ZBT SRAM
|
MICRON[Micron Technology]
|
| 80546KF |
64 Bit Processor
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache
64-bit Intel Xeon Processor MP with up to 8MB L3 Cache 64位Intel Xeon处理MP的高MB三级高速缓
|
Intel Corp.
Intel, Corp.
|
| ID244G01 |
8MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| DS3065WP-100IND |
3.3V, 8Mb, Nonvolatile SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
| MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
